Semiconductor photodetector device

摘要

A fast-response semiconductor photodetector device includes a semiconductor light-absorptive layer of a first conductivity type disposed on a semiconductor substrate of the first conductivity type, and a light-transmissive layer on the light-absorptive layer having a smaller relative dielectric constant than the light-absorptive layer. A semiconductor region of a second conductivity type is selectively formed in the light-transmissive layer to a depth which is less than the thickness of the light-transmissive layer. The second conductivity type region has includes extensions extending into the light-absorptive layer.