| 摘要 |
A nonvolatile semiconductor memory device has a memory circuit proper, a mode selector, and pulse generating circuits. The memory circuit proper includes a plurality of nonvolatile memory cells. The mode selector is capable of generating at least two mode signals. The mode selector detects a signal indicative of a specific operation applied to the memory circuit proper, and selects one of the mode signals in accordance with the detected signal. The pulse generating circuits generate a first and a second program pulses. Each pulse allows data to be written into the memory circuit proper in different manners in accordance with the mode signal selected by the mode selector.
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