| 摘要 |
PURPOSE:To obtain a semiconductor device, in which a bonding pad is not peeled, by a method wherein the device is provided with a base layer having a region wider than that of a barrier metal film, the barrier metal film, formed within the region of the base layer and having a region wider than that of the bonding pad, and the bonding pad disposed within the region of the barrier metal film. CONSTITUTION:A semiconductor device comprising a barrier metal film 10 formed on a base layer 9 and a bonding pad 11 formed on the metal film 10 is provided with the base layer 9 having a region wider than that of the metal film 10, the barrier metal film 10 formed within the region of the layer 9 and has a region wider than that of the pad 11, and the pad 11 disposed within the region of the metal film 10. For example, the area of a first wiring metal layer 9 on a semiconductor substrate 8 is made larger than that of a barrier metal film 10, and the metal film 10 is formed within the region of the layer 9. Moreover, the area of the metal film 10 is made larger than that of a bonding pad 11, and the pad 11 is disposed within the region of the metal film 10.
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