| 摘要 |
<p>PURPOSE:To obtain a stable manufacture yield by permitting plural standby memory cells arranged in a row or a column or a matrix to store information by means of a transistor threshold voltage. CONSTITUTION:Respective chips are provided with plural memory cells which are matrix-arranged in a matrix-form and the standby memory cells which are arranged in the row or the column or the matrix. The chip which can be redundancy-relieved among the chips which are judged to be defective is substituted for the standby memory cell based on arrangement information of the memory cell to be relieved and cell information. When there is an address input from outside, a redundant address detection circuit decides to use between the standby memory cell and the memory cell. When the memory cell is to be used, a row decoder for redundancy and a column decoder for redundancy are not operated and regular reading is executed. When the standby memory cell is used on the other hand, a row decoder and a column decoder do not operate and the row decoder for redundancy and the column decoder for redundancy operate. Then, a sense amplifier executes amplification and outputs information to outside.</p> |
