MOS FIELD EFFECT TRANSISTOR,申请号JP19900037643-传众专利搜索

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发明名称	MOS FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH03240273(A)	申请公布日期	1991.10.25
申请号	JP19900037643	申请日期	1990.02.19
申请人	MATSUSHITA ELECTRON CORP	发明人	UNO TOSHIHIKO
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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