发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To improve the reliability of writing erasing by dividing a memory array into several blocks and sequentially using them when a memory capacity to be used is small. CONSTITUTION:When the fuse of a fuse circuit 13 is disconnected, a division circuit 10 is activated. An X-decoder 3, a Y-decoder 4 and a Y-gate circuit 5 are respectively divided into several equal number and only one group is activated. The others are not activated. When the number of writing/erasing times reaches a prescribed value, a switching circuit 11 operates and the division circuit 10 switches the D-decoder 3, the Y-decoder 4 and the Y-gate circuit 5 so that one to remaining equal divided parts of the memory array 1 is selected. A signal is transmitted to a counter circuit 12 and a memory for counter 14 is switched to other groups. When the unused part of the memory array 1 is selected, writing/erasing can furthermore be executed. Thus, the number of writing/erasing times can be improved for a reduced capacity when the all memory capacity is not required.</p>
申请公布号 JPH03237696(A) 申请公布日期 1991.10.23
申请号 JP19900032793 申请日期 1990.02.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 ANDO NOBUAKI;YAMASHITA MASAYUKI
分类号 G11C29/00;G11C16/02;G11C16/06;G11C17/00;G11C29/04;H01L21/8247;H01L29/788;H01L29/792 主分类号 G11C29/00
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