| 摘要 |
<p>A substrate (3) such as a semiconductor wafer processing method and a substrate processing apparatus may be used in conjunction with the processing of a substrate (3) that involves the sputtering, etching, depositing, and like processes. According to the method and apparatus, the processing of a substrate (3) can proceed under the accurately controlled temperature environment. This may be achieved by measuring the temperature and emissivity of heat from the surface of the substrate (3) being processed, remotely as well as on the real-time basis, and correcting the temperature to reflect the actual temperature according to the emissivity as measured. <IMAGE></p> |
