发明名称 Semiconductor device using whiskers and manufacturing method of the same.
摘要 <p>A field effect transistor and a ballistic transistor using semiconductor whiskers (1) each having a desired diameter and formed at a desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed. <IMAGE></p>
申请公布号 EP0452950(A2) 申请公布日期 1991.10.23
申请号 EP19910106324 申请日期 1991.04.19
申请人 HITACHI, LTD.;HITACHI VLSI ENGINEERING CORPORATION 发明人 YAZAWA, MASAMITSU;HIRUMA, KENJI;KATSUYAMA, TOSHIO;FUTIGAMI, NOBUTAKA;MATSUMOTO, HIDETOSHI;KAKIBAYASHI, HIROSHI;KOGUCHI, MASANARI;MORGAN, GERARD P.;OGAWA, KENSUKE
分类号 C30B25/00;H01L21/20;H01L21/334;H01L21/335;H01L21/336;H01L21/34;H01L29/06;H01L29/12;H01L29/772;H01L29/775;H01L29/861;H01L33/18;H01S5/10;H01S5/34 主分类号 C30B25/00
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