| 摘要 |
<p>A method for measuring carrier lifetime of IV group semiconductor comprising the steps of irradiating pulse light, whose photon energy is larger than the bandgap of a IV group semiconductor and whose interval is sufficiently longer than the carrier lifetime of a IV group semiconductor, on a IV group semiconductor to be measured, exciting said IV group semiconductor by said pulse light, and generating excess carriers, obtaining a decay time of a band emission from a IV group semiconductor, and determining a carrier lifetime of said IV group semiconductor from the decay time of said band emission. <IMAGE></p> |
