| 摘要 |
PURPOSE:To obtain high performance and high integration of a static induction type transistor (SIT) without an isolating layer by forming a gate, a channel, a source and a drain of the transistor (SIT) in self alignment in a hole with a simple method. CONSTITUTION:An SiO2 film 13, an Si3N4 film 14 and an SiO2 film 15 contg. 13 are superposed on a p<-> type Si substrate 11 formed with an n<+> type buried layer 12, and a tapered hole 16 is opened thereat. An n type layer 17 is formed on the layer 12 by the epitaxial vapor growth, and polysilicon 18 is formed on the other part, is heat treated, and B is diffused from the layer 15, is patterned, and a p<+> type gate 19 and p<+> type polysilicon wire 20 are formed. Then, after it is thermally oxidized, an SiO2 22' is opened with a hole 23 at the thin layer above the layer 17. Then, an As-added SiO2 film 24 is accumulated, and with the film 22' as a mask, it is heat treated, and an n<+> type source 25 is formed. Windows are opened at the gate 19, the source 25, and the drain 12, electrodes 27-29 are attached thereto, and an SIT is thus completed. |
