发明名称 Radiation imaging sensor
摘要 A radiation imaging sensor including laminate structure of a phosphorescent layer, a light-transmissive electrode, a photoconductor layer, an insulating layer and an electrode, an applied voltage to the photoconductor layer through the light-transmissive electrode and the electrode is increased sufficiently so that light emitted from the phosphorescent member causes avalanche multiplicaton of the electrons and/or positive holes generated in the photoconductor layer by field sweep inside the photoconductor layer.
申请公布号 US5059794(A) 申请公布日期 1991.10.22
申请号 US19900517382 申请日期 1990.05.01
申请人 HITACHI, LTD. 发明人 TAKAHASHI, TETSUHIKO;OKAJIMA, KENICHI;UEDA, KEN
分类号 G01T1/20;G01T1/26;H01L31/0224;H01L31/0232;H01L31/08;H01L31/16 主分类号 G01T1/20
代理机构 代理人
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