发明名称 CHARGE SWEEP SOLID-STATE IMAGE SENSOR
摘要 An image sensor using a charge sweep device as a vertical transfer device (3) and comprising a plurality of pixels (10) each of which is formed of a single photo-electro transforming element (1) and a single transfer gate (4) for transferring a signal charge from the photo-electro transforming element into the charge sweep device (3), wherein the width of the transfer gate (4) is equal to or larger than that of the photo-electro transforming element in the direction of charge transfer in the charge sweep device (3).
申请公布号 US5060038(A) 申请公布日期 1991.10.22
申请号 US19890442461 申请日期 1989.11.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KIMATA, MASAFUMI;YUTANI, NAOKI;DENDA, MASAHIKO
分类号 H04N5/30;H01L27/14;H01L27/146;H01L27/148;H01L29/423;H04N5/335;H04N5/341;H04N5/357;H04N5/3728 主分类号 H04N5/30
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