| 摘要 |
<p>PURPOSE:To stably produce a phase shift reticule having high accuracy by using a photomask blank having the structure formed with a conductive layer and a light shielding layer in this order on a substrate as a substrate for the phase shift reticule. CONSTITUTION:The conductive layer 31 having, for example, 1 to 30nm thickness and the light shielding layer 32 having 50 to 200nm thickness are successively formed on the optically polished substrate 30. Further, an ionization radiation resist, such as chloromethylated polystyrene, is then uniformly applied on the surface and is subjected to a drying treatment by heating to form the resist layer 33 having about 0.1 to 2.0mum thickness. The conductive layer 31 for removing electrostatic charge is previously formed from the beginning on the substrate 30 to be worked, by which the ionization radiation plotting at the time of shift pattern formation is executed with the high accuracy without charge up of the substrate 30 and the phase shift reticule having the high accuracy is stably produced.</p> |
