| 摘要 |
PURPOSE:To boost the open end voltage up to a high value while increasing the photoelectric conversion efficiency by a method wherein an iridium oxide film is laid between a transparent electrode and a thin p type semiconductor film to change the thin p type semiconductor film into a thin p type fine crystal film, etc. CONSTITUTION:A glass substrate 1 with transparent electrode 2 comprising of tin oxide is arranged in a formation device capable of forming films by the high-frequency sputtering process. Next, the device is vacuumized to form a thin iridium oxide film 3 by reactive sputtering process using high-frequency power 0.4W/cm<2> for five minutes. Next, the substrate 1 is shifted to a thin p type semiconductor film formation chamber to form a thin p type fine crystal film 4 and then the substrate 1 is shifted to a thin i type semiconductor film formation chamber to form a thin amorphous silicon film 5. Next, the substrate 1 is further shifted to a thin n type semiconductor film formation chamber to form a thin n type semiconductor film 6 and then a metallic electrode 7 is formed. Resultantly, the open end voltage can be boosted up to such a very high value of 0.952V thereby enabling the photoelectric conversion efficiency to reach 12.02% for increasing the same. |
