WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

The semiconductor device for preventing the short of interconnection is manufactured by: (a) forming a insulating layer (7) for side wall protection on field oxide (2), followed by depositing the conductive layer (3); (b) forming a conductive interconnection (6) by etching the (7) and (3); (c) forming a metal oxide layer (11) on (6); (d) forming a pattern of conductive interconnection protected by insulating layer (7) for side wall protection.