| 摘要 |
PURPOSE:To form a p type layer in excellent crystallinity and high carrier concentration by a method wherein a II group element and a V group element in the substantially same concentration are added to a SiC semiconductor layer of a SiC blue LED. CONSTITUTION:As for the conductivity deciding type impurity of a p-SiC layer 13 laminated on an n-SiC layer 12 deposited on one main surface of an n-6HSiC substrate 11, dimethyl beryllium and ammonia gas are added simultaneously. Since the dimethyl beryllium and ammonia gas easily react at room temperature, both elements are separately led-in the part immediately before a reaction chamber and then mixed with each other to form an intermediate product. Through these procedures, the lattice strain can be restrained by the combination of a V group element and a II group element thereby making practically sufficient high concentration addition feasible while enabling the low acceptor level to be attained so that the p type layer 13 in excellent crystallinity and high carrier concentration may be formed thereby enabling a light emitting element in high luminescent efficiency to be formed. |
