发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To allow a substrate voltage to reach a prescribed voltage in an early stage so as to prevent occurrence of latch up at the time of switching in a power supply by providing a resetting pulse generation circuit which outputs resetting pulses to a substrate voltage generating capacity regulation circuit at the time of switch in of the power supply. CONSTITUTION:At the time of switching in a power supply, a resetting pulse generation circuit 4 generates resetting pulses and a substrate voltage generating capacity regulation circuit 2 increases the substrate voltage generating capacity of a substrate voltage generation circuit 1 upon receiving the pulses. When the power supply voltage and, accordingly, a reference voltage stabilizes, a substrate voltage monitor circuit 3 compares the substrate voltage with the reference voltage and outputs a signal for increasing the substrate voltage and the circuit 2, upon receiving the signal, increases the substrate voltage generating capacity of the circuit 1. As a result, the substrate voltage reaches a prescribed voltage in an early stage. Therefore, occurrence of latch up can be prevented at the time of switching in the power supply, since the substrate voltage can reach a prescribed voltage in an early stage.
申请公布号 JPH03235361(A) 申请公布日期 1991.10.21
申请号 JP19900031817 申请日期 1990.02.13
申请人 SHARP CORP 发明人 NAWAKI MASARU
分类号 H01L27/04;G11C11/408;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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