| 发明名称 |
POWER DIODE WITH SILICON OF MESA TYPE PRODUCTION METHOD |
| 摘要 |
<p>The invention relates to a procedure of producing, by MESA corrosion, structures for power diodes used in the microwaves field. The procedure, according to the invention, consists of producing the structure of the diodes by chemical corrosion in anisotropic plasma of polycrystalline silicon layers deposited simultaneously with a volume of monocrystalline silicon, in which, after epitaxy, the diffusion is achieved to obtain the p++ junction of the power diode.</p> |
| 申请公布号 |
RO102182(A2) |
申请公布日期 |
1991.10.21 |
| 申请号 |
RO19880137292 |
申请日期 |
1988.12.30 |
| 申请人 |
CENTRU DE CERCETARE STIINTIFICA SI INGINERIE TEHNOLOGICA PENTRU COMPONENTE ELECTRONICE, BUCURESTI, RO |
发明人 |
GAISEANU FLORIN, RO;POSTOLACHE CONSTANTIN, RO |
| 分类号 |
H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
| 代理机构 |
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