| 摘要 |
PURPOSE:To improve the degree of integration and to realize high speed operation by arranging drive MISFETs and transfer MISFETs while crossing one another in the longitudinal, direction of gate, extending the word line in the longitudinal direction of the gate electrode of the drive MISFETs and partially crossing the word wire with the gate electrode. CONSTITUTION:Drive MISFETs Qd1, Qd2 are mainly constituted of a p<->-type well region 2, a gate isolation film 6, a gate electrode 7, a source region and a drain region and aligned with the longitudinal direction of the gate, where the gate electrode 7 is formed of a single poly-Si film. Transfer MISFETs Qt1, Qt2 are mainly constituted of a p<->-type well region 2, a gate isolation film 12, a gate electrode 13, a source region and a drain region and cross, substantially in perpendicular, with the longitudinal direction of the gates of the Qd1, Qd2 where the gate electrode 13 has a lamination structure of a poly-Si film 13A and a high melting point metal silicide film 13B. A word line 13 is composed of same conductive layer as the gate electrode 13 and integrally therewith, and first and second word lines 13, 13 are extended in parallel in same row direction. |
