| 摘要 |
<p>PURPOSE:To prevent a wafer from defective separation by forming a mask along a dicing line on the rear surface of the wafer before an electrode is formed on the rear surface of the wafer, and removing this mask after the electrode is formed and before a sheet is affixed. CONSTITUTION:Resists 4a and 4b are formed on the front surface 1a and the rear surface 1b of a silicon wafer 1 respectively. The resist 4b is formed in a belt shape along a dicing line 1. And electrodes 5a and 5b are formed on the front surface 1a and the rear surface 1b of the silicon wafer respectively and the resists 4a and 4b are removed, and the silicon wafer 1 is made for half-dicing in the direction from the front surface 1a to the rear surface 1b by using a dicing saw 6, and diodes on the silicon wafer 1 are electrically separated. Then, an extensible wafer sheet 7 is affixed to the rear surface 1b of the silicon wafer.</p> |
