| 摘要 |
<p>PURPOSE:To enable improvement in electric reliability of semiconductor chips through stabilization of press-welding condition by masking the wafer's rear along dicing lines before electrodes are formed and by removing the mask after electrodes are formed. CONSTITUTION:Mesas 3 are defined in the silicon wafer's front 1a along dicing lines l and coated with glass passivation 4. The silicon wafer's rear 1b is spread with strips of resist 5 with predetermined width w along dicing lines l, and the front 1a and the rear 1b of the silicon wafer are plated with anode electrodes 6 and cathode electrodes 7, respectively. The next step is to peel the strips of resist 5 from the silicon wafer's rear 1b, and the final step is to dice the silicon wafer 1 along dicing lines l into discrete chips 8.</p> |
