| 摘要 |
PURPOSE:To realize a large capacity easily with small area of memory cell by constituting the memory cell of each pair of first and second conductivity type channel transistors in a CMOS gate array and load resistors formed on the gate electrodes of a pair of first conductivity type channel transistors. CONSTITUTION:Unit cell 11 of a CMOS gate array at the memory section of a CMOS gate array is constituted of an N-channel transistor section 12, a P-channel transistor section 13 and a substrate contact section 14, and two memory cells 15 are constituted with same area as single unit cell 11. Transistors 21, 22 for driving a flip-flop 20 are constituted of N-channel transistors, load resistors 31, 32 are formed on the gate electrodes 22a, 21a, and transistors 23, 24 are constituted of P-channel transistors. |
