发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To attain the conduction/interruption of a power supply current while an operating section is connected to a power line as it is by turning on/off a switching element with an external signal to generate a control voltage and using the control voltage to conduct/interrupt the power current driving the operating section. CONSTITUTION:A gate voltage generating circuit 3 is constituted of a switching enhancement type FET 33, its drain 33d is connected to a power terminal 31, a source 33s is connected to the anode of a diode D1 and a gate 33g is connected to an external voltage application terminal 34. A control voltage is generated by turning on/off the switching element 33 with an external signal and the control voltage is used to conduct/interrupt the power current driving the operating section. Thus, the power current supplied from a power line is conducted/ interrupted while the operating section is connected to the power line as it is to reduce the current consumption without generating noise.</p>
申请公布号 JPH03234117(A) 申请公布日期 1991.10.18
申请号 JP19900030244 申请日期 1990.02.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 SEKI HIROAKI;SATO FUMIO
分类号 H01L21/822;H01L27/04;H01L27/095;H03K3/356;H03K3/3562;H03K19/00;H03K19/0952;H03K21/00 主分类号 H01L21/822
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