发明名称 PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD
摘要 PURPOSE:To simplify stages and to prevent the degradation in the preservable stability of a resist material by incorporating a specific reactive low-molecular compd. into a photosensitive resin compsn. contg. an alkali-soluble polymer having a hydroxyl group and a diazonaphthoquinone compd. as essential components. CONSTITUTION:The reactive low-molecular compd. expressed by formula I is incorporated into the photosensitive resin compsn. contg. the alkali-soluble polymer having the hydroxyl group and the diazonaphthoquinone compd. as the essential components. In the formula I, R1 denotes hydrogen or an alkyl groupl; R2 denotes hydrogen, one kind of the groups selected from a group consisting of an alkyl group, arom. group and substd. arom. group. The reactant of the diazonaphthoquinone compd. and the alkali-soluble polymer or the reactive low-molecular compd. is formed and the indene carboxylic acid to accelerate the solubility in alkalis is not formed in the part irradiated with high energy rays in the formed in the part irradiated with high energy rays in the form of patterns. The hydroxyl group of the alkali-soluble polymer is brought into reaction with the reactive low-molecular compd. and the solubility in alkalis is suppressed by the irradiation with the high energy rays. The stages are simplified in this way and the degradation in the preservable stability of the resist material is prevented.
申请公布号 JPH03233456(A) 申请公布日期 1991.10.17
申请号 JP19900028299 申请日期 1990.02.09
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TANAKA HARUYORI;BAN KOJI
分类号 G03F7/004;G03F7/022;H01L21/027 主分类号 G03F7/004
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