MOS TYPE SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

On the surface area of the N type semiconductor substrate (11) the P<+> type source and drain regions (15) are provided. On the substrate surface between the above-mentioned source and drain regions (15), the gate electrode (13) is provided. On the side wall of the above-mentioned gate electrode (13), the CVD oxide film (14) is provided. The source and drain electrodes (19) are formed via contact holes (18) to make contact with the respective surfaces of the above-mentioned source and drain regions (15). The silicone nitride film (16) is formed on the substrate surface except the above-mentioned contact holes (18).