| 摘要 |
<p>PURPOSE:To obtain a TFT substrate high in reliability by a method wherein a gate terminal is provided with a layer of Cr or Ta, and a required part of the surface of a metal gate wiring pattern of Al or whose main component is Al is covered with an anodized film. CONSTITUTION:Cr 11 is evaporated on a substrate 10 to form gate terminals G1 and G2, furthermore Al 12 is evaporated to form gate wirings G1' and G2', an additional capacitor Cad, and a gate electrode pattern, and the surface of the substrate is covered with a photoresist excluding a part to be anodized and a formed pad PAD. Then, the Al gate wirings are made to cross the end of the photoresist at right angles and anodization is performed. Then the photoresist is removed, an SiN 14 is formed, an a-Si 15 and an a-Si (N<+>) 16 are deposited thereon, and indium oxide is evaporated to form a transparent electrode 17. In succession, Cr/Al is formed and patterned for a signal wiring 18 and a source electrode, the a-Si (N<+>) 16 is dry-etched using the patterned Cr/Al as a mask, and lastly a protective film 20 is formed and a part formed on the terminal is removed. In result, a TFT substrate can be sharply improved in reliability.</p> |
