DEPOSITION AND HARDENING OF TITANIUM GATE ELECTRODE MATERIAL FOR USE IN INVERTED THIN FILM FIELD EFFECT TRANSISTORS

摘要

The gate electrode in an inverted field effect transistor (FET) is fabricated with titanium to provide an FET which is particularly suitable for use as the switching element in a matrix addressed liquid crystal display. More particularly, the resist employed in gate electrode patterning is plasma ashed in an oxygen atmosphere to toughen the titanium gate material and render it more amenable to subsequent processing steps.