| 摘要 |
<p>A metallization system for an integrated circuit is disclosed. This metallization includes a film of an alloy of aluminum, copper and silicon (16), which is sputtered onto the surface of a wafer having active semiconductor elements therein, to provide an interconnection. A barrier layer (14), for preventing the diffusion of metal atoms such as aluminum into the underlying silicon, can be provided under the aluminum alloy film (16). It has been observed that the presence of copper in aluminum metallization, while reducing the electromigration failure rate, increases the susceptibility of the aluminum film to corrosion. Doping the aluminum with silicon, in addition to the copper, has been observed to reduce the corrosion susceptibility of the aluminum alloy film. <IMAGE></p> |
