发明名称 METHOD FOR FORMING DEPOSITED FILM
摘要 <p>A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.</p>
申请公布号 EP0234094(B1) 申请公布日期 1991.10.16
申请号 EP19860308271 申请日期 1986.10.23
申请人 CANON KABUSHIKI KAISHA 发明人 ISHIHARA, SHUNICHI;HANNA, JUNICHI;SHIMIZU, ISAMU
分类号 C23C16/22;C23C16/42;C23C16/44;C23C16/452;H01L21/205 主分类号 C23C16/22
代理机构 代理人
主权项
地址