发明名称 |
METHOD FOR FORMING DEPOSITED FILM |
摘要 |
<p>A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.</p> |
申请公布号 |
EP0234094(B1) |
申请公布日期 |
1991.10.16 |
申请号 |
EP19860308271 |
申请日期 |
1986.10.23 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ISHIHARA, SHUNICHI;HANNA, JUNICHI;SHIMIZU, ISAMU |
分类号 |
C23C16/22;C23C16/42;C23C16/44;C23C16/452;H01L21/205 |
主分类号 |
C23C16/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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