发明名称 |
Method of manufacturing oxide high-temperature superconductor thin film by means of molecular-beam epitaxy. |
摘要 |
<p>Monatomic layers each formed of a single metal are sequentially formed on a substrate using a molecular-beam epitaxy to form a multilayered metal film consisting of a plurality of types of metals, and sequentially with formation the monatomic layers, nitrogen dioxide gas as an oxidizer is supplied to oxidize the multilayered metal film. The same operation is repeatedly performed a predetermined number of times to form an oxide high-temperature superconductor thin film having a predetermined thickness. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0451641(A1) |
申请公布日期 |
1991.10.16 |
申请号 |
EP19910105025 |
申请日期 |
1991.03.28 |
申请人 |
PRESIDENT OF TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
KAWAI, MAKI;WATANABE, SHUNJI |
分类号 |
C01B13/14;C01G1/00;C01G29/00;C30B23/08;C30B29/22;H01B12/06;H01B13/00;H01L39/24 |
主分类号 |
C01B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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