| 摘要 |
In an apparatus for curing semiconductor wafers implementing same is provided. Pursuant to the method, semiconductor wafers, for example, GaAs, are cured in a reaction tube under a protective gas atmosphere of, for example, a mixture of N2 and AsH3. The reaction tube is initially heated to a base temperature at which the curing process is not initiated and at which no wall coatings occur. Given semiconductor wafers of compound semiconductors such as, for axample, GaAs, the protective atmosphere contains a compound of the more volatile element, for example, AsH3, that decomposes at the base temperature and forms an over-pressure of the more volatile element. The semiconductor wafer is heated to the curing temperature with a selective heater, for example a lamp, and is exposed to the curing temperature for 5 through 20 seconds.
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