发明名称 |
Method for fabricating a trench bipolar transistor |
摘要 |
A bipolar transistor formed in a trench depression such that a single impurity diffusing step is effective to form a buried collector layer electrically connected to a vertical collector conductor. The lateral diffusion forming the vertical collector conductor is effective to form the conductor with a uniform vertical doping profile, thereby reducing non-uniform series collector resistance characteristics. A trench depression sidewall dielectric is formed, and the trench is filled with a transistor silicon material by a selective epitaxial process. Base and emitter region are then formed in the collector epitaxial material.
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申请公布号 |
US5057443(A) |
申请公布日期 |
1991.10.15 |
申请号 |
US19900523436 |
申请日期 |
1990.05.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HUTTER, LOUIS N. |
分类号 |
H01L21/74;H01L21/762;H01L29/08;H01L29/732 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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