发明名称 |
Process for preparing epitaxial II-VI compound semiconductor |
摘要 |
An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.
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申请公布号 |
US5057183(A) |
申请公布日期 |
1991.10.15 |
申请号 |
US19890446114 |
申请日期 |
1989.12.05 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TOMOMURA, YOSHITAKA;KITAGAWA, MASAHIKO |
分类号 |
C30B23/08;C30B29/48;H01L21/203;H01L21/363;H01L29/22;H01L31/18;H01L33/00 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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