Diamond thin film transistor.

摘要

A thin film transistor in which a source electrode (26) is electrically isolated from a drain electrode (28) and a gate electrode (34). The gate electrode (34) is formed on one surface of an electrically insulating layer (32). A semiconducting layer (30) is formed on the other surface of the electrically insulating layer. The semiconducting layer has a charge carrier mobility of at least 1 cm<2>/V-sec. and is made from a polycrystalline diamond layer. The source electrode (26) and the drain electrode (28) are formed on one surface of the polycrystalline diamond layer (30). The other surface of the polycrystalline diamond layer is in integral contact with the other surface of the electrically insulating layer. <IMAGE>