| 摘要 |
PURPOSE: To reduce a peak value current of a dynamic ram selectively executing partial operation and to speed up the sense operation of a sense amplifier by providing with MOSFETs independently connecting each other side terminal to each supply voltage source through each power line. CONSTITUTION: Each one side terminal is connected to each connecting point P1-P4 connected to one side end of the other MOSFETs Q1, Q2, Q5, Q6, each other side terminal is independently connected to each supply voltage source VCC1 , VCC2 , VSS1 , VSS2 through each power line PC1, PC2, PS1, PS2, and each gate terminal is provided with MOSFETs Q3, Q4, Q7, Q8 which receive the supply of sense control signalsϕSPE0,ϕSPE1,ϕSNE0,ϕSNE1 and operate with the sense control signalsϕSPE0,ϕSPE1,ϕSNE0,ϕSNE1. Therefore, in the case of sensing information of a memory cell, stabilization is obtained without any noise. By this way, the peak value current of the dynamic ram selectively executing partial operation is reduced, and the sense operation of the sense amplifier is speeded up.
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