Semiconductor device and method of manufacturing the same.

摘要

A semiconductor device of the present invention comprises a silicon substrate (1), a silicon oxide layer (2) formed on the silicon substrate (1), first aluminum wires (11A and 11B) formed on the silicon oxide layer (2), a CVD SiO2 layer (4) covering at least the first aluminum wires (11A and 11B), and an inorganic oxide (3) precipitated from a liquid-phase material, the inorganic oxide (3) filling at least a gap between the first aluminum wires (11A and 11B).