| 摘要 |
PURPOSE:To make a semiconductor memory device large enough in capacity and to enable it to be manufactured through a fine processing technique while leaving a margin in it by a method wherein the storage node of a first memory element is formed above both memory elements, a cell plate is formed thereon, and the storage node of a second memory element is formed. CONSTITUTION:An isolating oxide film 2 is formed on a silicon substrate 1, a gate polysilicon 3 is deposited to form a side wall, then a flattening layer 4 of BPSG film is formed, an opening is provided to the lead-out part of a storage node, and a first storage node 5 is formed to be connected to one of adjacent memory elements. At this point, the storage node 5 is made to cover the upside of the adjacent memory element. Then, a thermal oxide film is formed on the storage node 5, and furthermore a cell plate 6 is formed. Then, a thermal oxide film is formed on the cell plate 6 again, and a second storage node 7 is formed to be connected to the other memory element. The storage node 7 is formed also covering over the adjacent element. |
