| 摘要 |
<p>PURPOSE:To improve a position detector in position resolution by a method wherein the terminal electrode of a front electrode layer is formed in the grooves provided to the opposed exposed parts of an amorphous semiconductor layer, and the terminal electrode of a back electrode layer is formed as the base layer of the back electrode layer on the opposed parts where the front electrode layer is not provided. CONSTITUTION:A front electrode layer 2 is formed nearly all over the surface of a light transmitting substrate 1 formed of light transmitting metal oxide. Then, the opposed ends of the front electrode layer 2 are removed through a photoetching method. Then, an amorphous semiconductor layer is formed on the front electrode layer 2 and the exposed part of the light transmitting substrate 1. In succession, a back electrode layer 4 is formed on the amorphous semiconductor layer 3. A YAG laser beam is made to scan the exposed amorphous semiconductor layer 3 to form grooves 3a and 3b which are deep enough to reach the light transmitting substrate 1. Then, terminal electrodes 5 and 6 are formed in the grooves 3a and 3b of the amorphous semiconductor layer 3, and terminal electrodes 7 and 8 are built on both ends of the back electrode layer 4. By this setup, a position detector improved in position resolution and position linearity can be obtained.</p> |
