| 摘要 |
A Zener diode structure comprising a semiconductor substrate layer of a first conductivity type, a first epitaxially formed semiconductor layer of the first conductivity type disposed on the substrate layer, a second epitaxially formed semiconductor layer of a second conductivity type disposed on the first semiconductor layer, a third semiconductor layer of the first conductivity type disposed over the second semiconductor layer, a buried layer of the first conductivity type disposed between and contacting the second and third semiconductor layers and a semiconductor contact region of the second conductivity type extending between and contacting a surface of the third semiconductor layer and the buried layer, the semiconductor contact region being an anode of a Zener diode, the buried layer being a cathode of the Zener diode.
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