发明名称 BONDING PAD STRUCTURE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent peeling of a bonding pad by depositing an insulating film having excellent adhesive properties to both a smooth coating film and a Ti film between the coating film and the Ti film. CONSTITUTION:An Si substrate 1, a silicon oxide film 2 formed by oxidizing the substrate at a high temperature, a smooth coating film 3 deposited by a CVD method, Ti barrier metal 4, an aluminum film 5, and a passivation film 6 made of SiO or SiO2 opened on the film 5 are provided. Further, an insulating oxide film 7 having high contact tight strength to be deposited by a CVD method under reduced pressure at a high temperature is provided on the film 3, and the metal 4 and the others are formed on the film 7. Thus, peeling of the pad can be prevented without altering the characteristics of Ti barrier metal.
申请公布号 JPH03227540(A) 申请公布日期 1991.10.08
申请号 JP19900023893 申请日期 1990.02.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARIMA JUNICHI
分类号 H01L21/60 主分类号 H01L21/60
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