| 发明名称 |
THIN OXIDE FUSE IN AN INTERGRATE CIRCUIT |
| 摘要 |
An oxide fuse formed by a thin layer of oxide dielectric between a lower electrode substrate and an upper electrode. A fuse-programming bias of approximately 15 V causes Fowler-Nordheim tunneling at low temperature to damage the dielectric layer, and shorts the upper and lower electrodes together. The oxide layer is advantageously formed simultaneously with the gate oxide layer in an EEPROM. |
| 申请公布号 |
KR910008103(B1) |
申请公布日期 |
1991.10.07 |
| 申请号 |
KR19860008665 |
申请日期 |
1986.10.16 |
| 申请人 |
AMERICAN MICROSYSTEMS INC. |
发明人 |
CHIAO SUN;WANG CHEN-CHING;BATRA TARJAIM R. |
| 分类号 |
H01L21/3205;H01L21/82;H01L21/8246;H01L21/8247;H01L23/52;H01L23/525;H01L27/112;H01L27/115;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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