Semiconductor memory device

摘要

The invention relates to a semiconductor memory device including bit line contacts (1) arranged as a folded bit line structure, in which a bit line (BL) connects the said bit line contacts in a zigzag configuration. By virtue of this configuration, the spacing between the bit lines is roughly twice that of semiconductor memory devices having an open bit line structure, this reducing a coupling capacity and substantially attenuating the noise due to the coupling in a high-density memory. <IMAGE>