| 摘要 |
PURPOSE:To increase an area faced with an upper-part capacitor electrode and to increase a capacitor capacity by a method wherein a lower-part capacitor electrode is formed in such a way that at least one part of the cross section in the channel direction of a word line of a MOS transistor is covered with it. CONSTITUTION:A lower-part capacitor electrode 13 is formed so as to cover the cross section in the channel direction of word lines 61 to 64. In addition, the lower-part capacitor electrode 13 is formed so as to cover a stepped part produced at the connecting part of a bit line 11 to a source/drain diffusion layer 42. That is to say, since the lower-part capacitor electrode 13 is formed in a shape dropped into the stepped part, a curved surface exists there. Since the curved surface exists at the lower-part capacitor electrode 13, this means that an area faced with an upper-part capacitor electrode 15 is increased as viewed from its cross section. When the stepped part produced inevitably at the connecting part of the bit line 11 to the source/drain diffusion layer 42 is utilized positively and effectively, it is possible to reasonably achieve the request for an increase in an capacitor capacity. |
