| 摘要 |
PURPOSE:To more accelerate the read/write of data by three-dimensionally laminating plural plane-shaped memory arrays arranging plural memory cells, forming a memory part and parallelly inputting/outputting the data from the respective arrays. CONSTITUTION:Memory arrays 241-24n are formed by respectively arranging the plural memory cells in the shape of a matrix on on the plane-shaped surfaces. The plural memory arrays are multi layer laminated so as to form a memory part 24. Paired bit lines 22a and 22b are commonly provided to all the memory arrays and commonly connected to the memory cells at the prescribed positions of the respective memory arrays. All the paired bit lines are parallelly connected to a data output part 26. This semiconductor memory device can parallelly drive the plural memory arrays through the operations of another control part 29, signal amplifier part 21, word line decode part 28 and sense amplifier part 25, etc., and the data can be inputted/outputted at high speed. |
