| 摘要 |
PURPOSE:To realize a large capacity of programmable read only memory(PROM), to which writing can be done with a relatively small current in simple structure by equipping it with an insulating film which breaks down and conducts electricity when specified voltage is applied between a word line and a column line. CONSTITUTION:This is equipped with a word line 1, a column line 2, a diode 3a, and an antifuse 4a, and the diode 3a and the antifuse 4a are connected in series to constitute a memory cell 5a of one bit, and this is connected between the word line 1 and the column line 2. And a thin insulating film 17, which constitutes the antifuse 4a, becomes conductive when its insulation is broken by applying relatively large voltage. This insulation breakdown is so-called voltage breakdown, and this can be done with a relatively small current. Since it shares one diffusion layer of the diode 3a with one electrode of the antifuse 4a, the occupancy per bit is small, and it possible to elevate packaging density. Hereby, a PROM where writing can be done with a relatively small current and capacity enlargement can be done, can be gotten. |
