| 摘要 |
PURPOSE:To control a light-emitting characteristic and to easily obtain a light- emitting layer complying with a demand by a method wherein a-C:Si, H film obtained by a P-CVD method are used as a hole injection layer and the light- emitting layer and the mixture amount of SiH4 gas is changed. CONSTITUTION:A hole injection layer 3 composed of a p-type amorphous carbon- based film is produced by a plasma chemical vapor deposition method by which a low-pressure reaction gas containing a hydrocarbon gas, hydrogenated silicon gas and a p-type impurity gas is glow-discharged inside a vacuum container and a decomposed gas is polymerized. A light-emitting layer 4 whose mixture ratio of a hydrocarbon gas to hydrogenated silicon gas is made larger than the mixture ratio in the hole injection layer 3 and which is composed on an amorphous carbon-based film is laminated on the hole injection layer. An electron injection layer 5 composed of an n-type amorphous silicon carbide film is laminated on the light-emitting layer 4 by a plasma chemical vapor deposition method by which a reaction gas which contains an n-type impurity gas and whose mixture ratio of hydrogenated silicon gas to a hydrocarbon gas is larger than the mixture ratio in the light-emitting layer 4 is polarized. |
