发明名称 MICROWAVE FIELD EFFECT DEVICE
摘要 A monolithic microwave integrated circuit switch includes a series field effect transistor (16) having a source drain path (S, D) in series with an inductive transmission line (17) including plural taps (27-29). Source drain paths of plural shunt field effect transistors are connected to the taps. The source drain paths of the series and shunt transistors are biased so that the series and shunt source drain paths have complementary low and high impedance states. The high impedance state is capacitive, having a value on the order of magnitude of the inductive transmission line. During a first time interval, the capacitive and inductive impedances form a matched low pass filter to supply current from a microwave source to a load (13). During a second time interval, current from the microwave source flows through the shunt field effect transistors to be decoupled from the load.
申请公布号 WO9115055(A1) 申请公布日期 1991.10.03
申请号 WO1991US02194 申请日期 1991.03.28
申请人 VARIAN ASSOCIATES, INC. 发明人 EINSENBERG, JOHN, A.
分类号 H03K17/687 主分类号 H03K17/687
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