| 摘要 |
<p>A semiconductor memory circuit comprises a plurality of memory cells each connected to a corresponding word line and a corresponding pair of digit lines. The pair of digit lines are pulled up through a pair of load transistors, respectively, and connected through a pair of gate transistors to a corresponding pair of data bus lines, respectively, which are in turn connected to a sense amplifier and pulled down through a pair of driving transistors, respectively. A voltage supply circuit is provided which includes a voltage divider circuit composed of series-connected dummy transistors having the same characteristics as those of the load, gate and driving transistors which cooperate to determine a potential on the pair of data bus lines when the pair of digit lines and the pair of data bus lines are selected. On the basis of a reference voltage generated by the voltage divider circuit, the voltage supply circuit operates to generate a voltage to be supplied to the pair of data bus lines when the pair of digit lines and the pair of data bus lines are not selected. The voltage generated by the voltage supply circuit is supplied to the pair of digit lines or the pair of data bus lines through a switch circuit which is turned on when the pair of digit lines and the pair of data bus lines are not selected. <IMAGE></p> |
