发明名称 Substrate material and method for the preparation of oxide superconductors.
摘要 <p>A substrate material for the preparation of an oxide superconductor comprises two different rare earth elements A' and A'' in the IIIa group, Ga, and O, the atomic ratio of these elements being expressed as A'1-xA''xGaO3 (where 0&lt;x&lt;1), and a mixed crystal material forming a perovskite-type structure having a composition of AGaO3 with A being at least one of the two rare earth elements A' and A'' in the IIIa group. A method for the preparation of the oxide superconductor, or a semiconductor, comprises forming an intermediate layer of a mixed crystal material of two different rare earth elements A' and A'' in the IIIa group, Ga, and O. The atomic ratio of these elements is expressed as A'1-xA''xGaO3 (where 0&lt;x&lt;1) and the mixed crystal material has a perovskite-type structure whose composition is AGaO3 with A being at least one of the two rare earth elements A' and A'' in the IIIa group.</p>
申请公布号 EP0449128(A2) 申请公布日期 1991.10.02
申请号 EP19910104504 申请日期 1991.03.22
申请人 INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER;MITSUBISHI JUKOGYO KABUSHIKI KAISHA;FUJIKURA LTD.;NIPPON STEEL CORPORATION 发明人 OISHI, AKIRA, SUPERCONDUCTIVITY RES. LAB.;USUI, TOSHIO, SUPERCONDUCTIVITY RES. LAB.;TESHIMA, HIDEKAZU, C/O SUPERCONDUCTIVITY RES. LAB.;MORISHITA, TADATAKA, SUPERCONDUCTIVITY RES. LAB.
分类号 C04B35/00;C01B13/14;C01G1/00;C04B35/45;H01B12/06;H01B13/00;H01L39/24 主分类号 C04B35/00
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