| 摘要 |
PURPOSE:To make the rise characteristic of the gate current uniform, by connecting diodes, which are formed on an N type plate, in series to the gate of a main thyristor. CONSTITUTION:Plural diodes 1 to increase the noise rating quantity are connected in series to the gate of a main thyristor 4. Since diodes formed on an N type substrate have a good rise characteristic, diodes formed on the N type substrate are used as diodes 1 to make the rise characteristic of the gate current uniform, and the variance of the ignition time is eliminated. |
